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Ferroelectric domain inversion and its stability in lithium niobate thin film on insulator with different thicknesses

机译:铁电畴反转及其在铌酸锂薄膜中的稳定性   不同厚度的绝缘体薄膜

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摘要

Ferroelectric domain inversion and its effect on the stability of lithiumniobate thin films on insulator (LNOI) are experimentally characterized. Twosets of specimens with different thicknesses varying from submicron to micronsare selected. For micron thick samples (~28 um), domain structures are achievedby pulsed electric field poling with electrodes patterned via photolithography.No domain structure deterioration has been observed for a month as inspectedusing polarizing optical microscopy and etching. As for submicron (540 nm)films, large-area domain inversion is realized by scanning a biased conductivetip in a piezoelectric force microscope. A graphic processing method is takento evaluate the domain retention. A domain life time of 25.0 h is obtained andpossible mechanisms are discussed. Our study gives a direct reference fordomain structure-related applications of LNOI, including guiding wave nonlinearfrequency conversion, nonlinear wavefront tailoring, electro-optic modulation,and piezoelectric devices.
机译:实验表征了铁电畴反转及其对绝缘体上铌酸锂薄膜(LNOI)稳定性的影响。选择两组厚度从亚微米到微米不等的样品。对于微米厚的样品(〜28 um),通过脉冲电场极化并通过光刻图案化的电极来获得畴结构。使用偏光光学显微镜和蚀刻检查,一个月内都未观察到畴结构恶化。对于亚微米(540 nm)膜,通过在压电力显微镜中扫描偏置的导电尖端可实现大面积畴反转。采用图形处理方法来评估域保留。获得了25.0 h的域寿命,并讨论了可能的机制。我们的研究为LNOI的与域结构相关的应用提供了直接的参考,包括导波非线性频率转换,非线性波前裁剪,电光调制和压电器件。

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